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【Guy Aubin】
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Silicon Photonics
High-speed silicon photonic electro-optic Kerr modulation
Jonathan Peltier
1,2,4,*
Weiwei Zhang
3,5,*
Leopold Virot
2
Christian Lafforgue
1
[ ... ]
Laurent Vivien
1
Author Affiliations
Abstract
1
University Paris-Saclay, CNRS, Centre for Nanoscience and Nanotechnology (C2N), Palaiseau 91120, France
2
University Grenoble Alpes, CEA, LETI, Grenoble 38000, France
3
Optoelectronics Research Centre, Zepler Institute for Photonics and Nanoelectronics, Faculty of Engineering and Physical Sciences, University of Southampton, Southampton SO17 1BJ, UK
4
e-mail: jonathan.peltier@c2n.upsaclay.fr
5
e-mail: Weiwei.Zhang@soton.ac.uk
Silicon-based electro-optic modulators contribute to easing the integration of high-speed and low-power consumption circuits for classical optical communications and data computations. Beyond the plasma dispersion modulation, an alternative solution in silicon is to exploit the DC Kerr effect, which generates an equivalent linear electro-optical effect enabled by applying a large DC electric field. Although some theoretical and experimental studies have shown its existence in silicon, limited contributions relative to plasma dispersion have been achieved in high-speed modulation so far. This paper presents high-speed optical modulation based on the DC Kerr effect in silicon PIN waveguides. The contributions of both plasma dispersion and Kerr effects have been analyzed in different waveguide configurations, and we demonstrated that the Kerr induced modulation is dominant when a high external DC electric field is applied in PIN waveguides. High-speed optical modulation response is analyzed, and eye diagrams up to 80 Gbit/s in NRZ format are obtained under a d.c. voltage of 30 V. This work paves the way to exploit the Kerr effect to generate high-speed Pockels-like optical modulation.
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Photonics Research
2024, 12(1): 51
Silicon Photonics
25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures
Daniel Benedikovic
1,*
Léopold Virot
2
Guy Aubin
1
Farah Amar
1
[ ... ]
Laurent Vivien
1
Author Affiliations
Abstract
1
Centre de Nanosciences et de Nanotechnologies, CNRS, University of Paris-Sud, Université Paris-Saclay, C2N–Palaiseau, 91120 Palaiseau, France
2
University Grenoble Alpes and CEA, LETI, Minatec Campus, F-38054 Grenoble, Grenoble Cedex, France
3
Technology R&D, STMicroelectronics SAS, 850 rue Jean Monnet–38920 Crolles, France
Near-infrared germanium (Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the high-data-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon (Si-Ge-Si) junction operating under low reverse bias at 1.55 μm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of ~9 GHz at ?1 V and ~30 GHz at ?3 V, with a leakage dark current as low as ~150 nA, allowing superior signal detection of high-speed data traffic. A bit-error rate of 10?9 is achieved for conventional 10 Gbps, 20 Gbps, and 25 Gbps data rates, yielding optical power sensitivities of ?13.85 dBm, ?12.70 dBm, and ?11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next-generation nanophotonics integrated circuits.
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Photonics Research
2019, 7(4): 04000437
Recent advances in development of vertical-cavity based short pulse source at 1.55 μm
Zhuang ZHAO
*
Sophie BOUCHOULE
Jean-Christophe HARMAND
Gilles PATRIARCHE
[ ... ]
Jean-Louis OUDAR
作者单位
摘要
Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Marcoussis, France
semiconductor laser
vertical external cavity surface emitting laser (V
indium phosphide
heat dissipation
saturable absorber mirror
mode-locking
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Frontiers of Optoelectronics
2014, 7(1): 1
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